NTB110N65S3HF AUF
| Verfügbar |
NTB110N65S3HF ON
• 700 V @ TJ= 150°C
• Typ. RDS(on)= 98 m
• Ultra Low Gate Charge (Typ. Qg= 62 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.)= 522 pF)
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
• 700 V @ TJ= 150°C
• Typ. RDS(on)= 98 m
• Ultra Low Gate Charge (Typ. Qg= 62 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.)= 522 pF)
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
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